Plasma Enhanced Atomic Layer Deposition Passivated HfO₂/AlN/In_0.53Ga_0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

摘要

The impact of plasma-enhanced atomic layer deposition passivation on the electrical properties of HfO/InGaAs metal–oxide–semiconductor capacitors (MOSCAPs) has been studied. Excellent interface quality of high-/III–V is achieved by aluminum nitride (AlN) interfacial passivation layer, including strong inversion behaviors and unpinned Fermi level. The band alignment of HfO/AlN/InGaAs structure with the valence band offsets of 2.81 ± 0.1 eV and the conduction band offsets of 1.9 ± 0.1 eV was obtained. Better interface and optimized high- dielectric qualities are achieved using post remote-plasma treatment with either N/H or NH gases. Sub-nanometer equivalent oxide thickness HfO/AlN/InGaAs MOSCAPs with low interface trap density and low leakage current density have been characterized.