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A Novel Three-State Contactless RF Micromachined Switch for Wireless Applications

机译:用于无线应用的新型三态非接触式射频微机械开关

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This letter presents a novel three-state contactless radio frequency (RF) microelectromechanical systems switch for wireless applications. The switch is free from stiction and charge injection issues occurred inherently in contact-type RF MEMS switches, thereby increasing reliability and lifetime. The contactless switch is based on variable capacitance between signal lines and movable grounded electrodes controlled by electrostatic actuator. The movable grounded electrode has the capability to move bidirectionally, and therefore, the switch can change among ON-, OFF-, and deep OFF-states. Thus, additional isolation can be achieved in the deep OFF-state. The RF measurement results show that the contactless switch has a capacitance tuning ratio of 5.25 between OFF- and ON-states, and a higher tuning ratio of 11.18 between deep OFF- and ON-states. In addition, the switch exhibits −3.62 dB insertion loss and −24.43 dB isolation at 2.4 GHz. At 5 GHz, the insertion loss and isolation are −2.95 dB and −20.65 dB, respectively.
机译:这封信提出了一种用于无线应用的新型三态非接触射频(RF)微机电系统开关。该开关没有静摩擦,并且在接触式RF MEMS开关中固有发生电荷注入问题,从而提高了可靠性和使用寿命。非接触式开关基于信号线与静电致动器控制的可移动接地电极之间的可变电容。可移动的接地电极具有双向移动的能力,因此,开关可以在ON,OFF和深OFF状态之间切换。因此,可以在深度OFF状态下实现额外的隔离。 RF测量结果表明,非接触式开关在OFF和ON状态之间的电容调谐比为5.25,在深度OFF和ON状态之间的电容调谐比更高,为11.18。此外,该开关在2.4 GHz时具有−3.62 dB的插入损耗和−24.43 dB的隔离度。在5 GHz时,插入损耗和隔离度分别为-2.95 dB和-20.65 dB。

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