Overshoot Stress on Ultra-Thin HfO₂ High- src='/images/tex/21688.gif' alt='kappa '> Layer and Its Impact on Lifetime Extraction

摘要

Overshoot stress (stimulating the actual IC operating condition) on an ultra-thin HfO (EOT nm) high- layer is investigated, which reveals that overshoot is of great importance to high- layer leakage degradation. The dynamic stress-induced leakage current is correlated with traps generation and recovery, which is dependent on stress input and release. A degradation model based on the oxygen vacancies is proposed to interpret the experimental observation.