Gate-First High-Performance Germanium nMOSFET and pMOSFET Using Low Thermal Budget Ion Implantation After Germanidation Technique

摘要

The fabrication of high-performance Ge nMOSFET and pMOSFET by using the ion implantation after germanidation (IAG) technique is demonstrated. TaN/AlO/GeO is deposited as a common gate stack for the low-temperature gate-first process. Both Ge nMOSFET and pMOSFET exhibited a high ratio of (, a reasonable subthreshold swing of approximately 100 mV/decade, and a low parasitic resistance -. The IAG technique is proved to be a low thermal budget technique for fabricating both Ge nMOSFET and pMOSFET below 400 °C.