A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study

摘要

A superjunction MOSFET (SJ-MOSFET) with a new fully close-packed hexagonal pattern for its superjunction (SJ) region is proposed. According to TCAD simulation, the proposed device can accommodate highly doped n-pillars with no significant degradation of its blocking voltage (BV), where its conventional counterpart, a SJ-MOSFET with a stripe-patterned SJ region is incapable of. In comparison with the conventional device, the proposed device shows dramatic reduction of ON-resistance down by 41% while keeping its BV of 650 V. The proposed device also shows superior BV resilience to charge imbalance than the conventional device.