Novel Homogenization Field Technology in Lateral Power Devices

摘要

A novel Homogenization Field Technology (HOFT) in lateral power devices is proposed and experimentally proved in this letter. By introducing the periodically discrete metal insulator semiconductor (MIS) structure, which realizes periodic equal potential and self-charge balance, the HOFT obtains almost uniform surface and bulk electric field distributions in the voltage sustaining layer. Therefore, the new device harvests both higher breakdown voltage V B and lower specific on-resistance R-on,R- sp than those of the conventional reduced surface field (RESURF) technology in much higher and wider doping dose range. The experiment of the HOFT device realized a V-B of 672 V and a R-on,R-sp of 56.7 m Omega center dot cm(2) under a high dopingdoseof 5.6 x 10(12) cm(-2), which represents a reduction of 33.8% when compared with the theoretical value of the triple RESURF technology.