Silicon Nitride Deep-Ultraviolet Photoconductive Detector

摘要

In this letter, amorphous silicon nitride (Si3N4) film grown by inductively coupled plasma chemical vapor deposition (ICPCVD) method is used as the photosensitive layer of deep ultraviolet (DUV) detection, whose thickness and roughness are 200 nm and 0.92 nm, respectively. The transverse symmetrical photoconductive detector with interdigital electrodes spacing of 4 mu m is fabricated by photolithography, exhibiting ultrahigh photo-to-dark current ratio (PDCR) more than 10(5), fast fall speed of 127 ms and also a satisfying responsivity of 1.09 mA/W. This work lays a foundation for further researches on Si3N4 in photonics and electronics.