Corrections to “600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V” [Nov 19 1792-1795]

著录项

• 来源
  《IEEE Electron Device Letters》 |2020年第1期|195-195|共1页
• 作者

  Agarwal Aditi; Han Kijeong; Jayant Baliga B.;

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• 作者单位

  North Carolina State Univ Elect & Comp Engn Dept Raleigh NC 27695 USA;

  North Carolina State Univ Elect & Comp Engn Dept Raleigh NC 27695 USA;

  North Carolina State Univ Elect & Comp Engn Dept Raleigh NC 27695 USA;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  MOSFET; Silicon carbide; Logic gates; Silicon; Foundries; Insulated gate bipolar transistors; Object recognition;

  机译：MOSFET;碳化硅;逻辑门;硅;铸造;绝缘栅双极晶体管;物体识别;