Self-Welding and Low-Temperature Formation of Metal Oxide Nanofiber Networks and its Application to Electronic Devices

摘要

Electrospinning technique is considered to be one of the most powerful approaches for the preparation of one-dimensional (1D) metal oxide nanofiber networks (NFNs). In this report, In2O3 NFNs were fabricated by electrospinning using polymethyl methacrylate (PMMA) as polymer and epoxy resin as additive. Benefiting from the excellent chemical properties of PMMA, In2O3 NFNs with impact stacking were prepared at a relatively low annealing temperature by a welding process. The welded In2O3 NFNs were characterized by various techniques and the electrical performance of the field-effect transistors (FETs) based on the welded In2O3 NFNs were systematically investigated. It is observed that the FET based on In2O3 NFNs annealed at 320 degrees C, with a nanofiber density of 0.4 mu m(-1) exhibits high electrical performance, including an /(ON)//(OFF) of similar to 5x10(7), a mu(FE) of 1.27 cm(2)/V s, an on voltage of -8 V and a hysteresis of 5 V. A device array with 4 x 5 units was fabricated and tested, confirming the excellent reliability and reproducibility of the FET.