Electron Mobility in Defective Nanoribbons of Monoelemental 2D Materials

摘要

Statistical atomistic quantum transport simulations are employed to study electron mobility in silicene, germanene, phosphorene and graphene nanoribbons with edge defects. We demonstrate that silicene and germanene nanoribbons can provide the mobility of up to approximate to 100 cm(2)/Vs in the sub-6 nm width range. However, none of these nanostructures appear promising for future extremely-scaled transistors when bandgap-mobility trade-off in defective nanoribbons is considered.