Ultra-Low Contact Resistivity of < 0.1 Ω⋅ mm for Au-Free TixAly Alloy Contact on Non-Recessed i-AlGaN/GaN

摘要

A robust process for Au-free ohmic contact formation is demonstrated by a direct contact of TixAly alloy film on non-recessed i-AlGaN/GaN. Using this novel TixAly alloy instead of multilayers as contact metals, an ultra-low contact resistivity of <0.1 Omega.mm is achieved for Ti5Al1 alloy on i-AlGaN/GaN after 880 degrees C/60s annealing.