机译:混合尺寸石墨烯/单CdSe纳米带肖特基结中的势垒高度不均匀性
Chongqing Univ, Coll Optoelect Engn, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China;
Chongqing Univ, Coll Optoelect Engn, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China;
Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China;
Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China;
Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China;
Chongqing Univ, Coll Optoelect Engn, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China;
Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China;
Graphene; CdSe Nanobelt; Schottky junction; inhomogeneity;
机译:石墨烯/ MOS2肖特基联盟的肖盖特屏障高度的空间不均匀性
机译:石墨烯/ Si(GaAs)肖特基结的势垒高度不均匀
机译:单层石墨烯/ SiC肖特基结的势垒高度本征不均匀
机译:屏障高度对肖特基结的光响应特性的横向不均匀性的影响
机译:石墨烯/半导体肖特基结处的空间不均匀势垒高度。
机译:具有改善的势垒高度均匀性的单层石墨烯/ SiC肖特基势垒二极管作为检测重金属的传感平台
机译:一种简单可扩展的石墨烯图案化方法及其在FpGa中的应用 Cdse纳米带/石墨烯肖特基结太阳能电池