Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS₂-Loads

摘要

Herein, GaN driver FETs with a high-energy bandgap are employed in photosensitive inverters to eliminate light-shield layers (LSLs). This configuration exhibits the full-swing characteristics of photosensitive inverters comprised of multi-layered MoS2 FET loads in the photo-sensitive pseudo-depletion mode. The GaN FETs provide both high current drivability and excellent photo-leakage immunity under visible light. This allows the photosensitive inverters to be successfully operational without LSLs. The relative degradation (%) of voltage gain for photosensitive inverters with GaN drivers from dark to blue light exposure is improved from 67.7% to 53.0%, as compared to previously reported MoS2 inverters with LSLs.