Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers

摘要

Multi-layered MoS2 inverters with light shielding layers were fabricated and demonstrated for application in highly sensitive photodetectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical bandgap. The photoleakage behaviors of the inverters under changing wavelengths of light were experimentally demonstrated to occur in a controlled manner and were analytically validated by load-line analysis. When the inverters were operated with a depletion load in the light of blue light emitting diodes, the low noise margin and transition width were significantly enhanced, by approximately 20% and 220%, respectively, as compared with those of the inverters in the dark.