Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in$eta$-Ga₂O₃FETs

摘要

A novel technique is proposed for the simultaneous extraction of energy distribution of donor- and acceptor-like interface trap states [D_{it_D}(E) and D_{it_A}(E)] over a wide range of bandgap energy using deep UV light with sub-bandgap (E_ph= hν <; E_g) photons less than the bandgap of the β-gallium oxide (β-Ga₂O₃) channel material in the β-Ga₂O₃field-effect transistors. In the proposed technique,we characterized D_{it_D}(E) and D_{it_A}(E) separately based on the difference in the gate voltage (V_GS)-dependent ideality factors [d Δη(V_GS)/dV_GS] for the photoresponsive carriers excited from D_{it_D}(E) and D_{it_A}(E) under two different regions (V_ON<; V_GS<; V_FBand V_FB<; V_GS<; V_T) in the subthreshold operation.