Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain

摘要

We present a novel hybrid dopant activation technique for n-type silicon–germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of$1.82imes 10^{extsf {20}}$cm^{−3and$9.27imes 10^{extsf {20}}$cm−3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.}