首页> 外文期刊>IEEE Transactions on Electromagnetic Compatibility >Near Field Shielding Performances of Absorbing Materials for Integrated Circuits (IC) Applications Part I: Lateral Excitation
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Near Field Shielding Performances of Absorbing Materials for Integrated Circuits (IC) Applications Part I: Lateral Excitation

机译:集成电路(IC)应用吸收材料的近场屏蔽性能第一部分:横向激励

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Electromagnetic emission from electronic devices is one of the aspect to be considered from electromagnetic Engineers and Designers; its prediction can be essential to avoid the degradation of the performance of the system. Using absorbing material is one way to limit and control the emission from devices such as integrated circuits (ICs). This paper deals with the investigation of the performance of an absorbing material, in near field, applied to an IC. The contribution is divided in two parts. In Part I, the excitation and ground ports are placed as close as possible, in two adjacent pins of the IC. The absorber is so arranged in two different ways: as a patch on the top face of the IC plastic package or as lid completely covering the IC. The results, in terms of shielding effectiveness, absorption, reflection, and transmission are then compared in Part II with the configuration in which the signal and ground ports are as far as possible.
机译:电子设备的电磁辐射是电磁工程师和设计师要考虑的方面之一;其预测对于避免系统性能下降至关重要。使用吸收材料是限制和控制来自诸如集成电路(IC)之类设备的发射的一种方法。本文研究了应用于IC的吸收材料在近场中的性能。贡献分为两个部分。在第I部分中,激励端口和接地端口尽可能靠近IC的两个相邻引脚放置。吸收体的排列方式有两种:在IC塑料封装的顶面上贴片或完全覆盖IC的盖子。然后,在屏蔽效果,吸收,反射和透射方面,将结果与第二部分中的信号和接地端口尽可能远的配置进行了比较。

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