机译:集成电路(IC)应用吸收材料的近场屏蔽性能第一部分:横向激励
UAq EMC Laboratory, Department of Industrial and Information Engineering and Economics, University of L'Aquila, L'Aquila, Italy;
UAq EMC Laboratory, Department of Industrial and Information Engineering and Economics, University of L'Aquila, L'Aquila, Italy;
UAq EMC Laboratory, Department of Industrial and Information Engineering and Economics, University of L'Aquila, L'Aquila, Italy;
IBM Systems Group, Research Triangle Park, Durham, NC, USA;
LAIRD Technologies, Manchester, NH, USA;
LAIRD Technologies, Manchester, NH, USA;
IBM Systems Group, Research Triangle Park, Durham, NC, USA;
Department of Electrical and Electronics Engineering, Missouri University of Science and Technology, Rolla, MO, USA;
Pins; Face; Integrated circuit modeling; Graphical models; Distribution functions; Noise measurement;
机译:集成电路(IC)应用吸收材料的近场屏蔽性能。第二部分:交叉激励
机译:负电容电路在压电锆钛酸铅钛材料弹性控制中的应用基础研究
机译:错误:一种用于射频集成电路应用的新型源材料工程双栅极隧道场效应晶体管(2020 SOMOND。SCI。TECHNOL。35 105013)
机译:SOI横向双载流子场效应晶体管和集成电路(SOI LDCFET和SOI DCFEIC)的微波性能
机译:基于磷化铟的材料和异质结构器件及其在单片集成NPN和PNP HBT电路中的应用。
机译:集成高性能CMOS图像传感器在测距仪中的应用-从光学三角测量到汽车领域
机译:用于子THz集成电路应用的低电阻率硅的多通道AlGaN / GaN横向舒特基二极管
机译:极其可弯曲的高性能集成电路,采用半导体碳纳米管网络,适用于数字,模拟和射频应用。