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首页> 外文期刊>Electrical Engineers, Proceedings of the Institution of >Negative magnetoresistance effect in evaporated indium-antimonide films
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Negative magnetoresistance effect in evaporated indium-antimonide films

机译:蒸发的锑化铟薄膜的负磁阻效应

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摘要

The paper discusses the results of an experimental investigation of an anomalous galvanomagnetic effect in an evaporated indium-antimonide film. The film used was prepared by the step-by-step method of evaporation in a vacuum, producing successive deposits on a clean glass substrate. The electrical characteristics of the film were measured in a steady magnetic field and showed some unusual features such as high resistivity, a relatively large Hall coefficient dependent on the applied magnetic field and a negative magnetoresistance effect at room temperature. These anomalous effects have been analysed qualitatively in terms of the inhomogeneous nature of the film.
机译:本文讨论了在蒸发的锑化铟薄膜中反电动势效应的实验研究结果。通过在真空中蒸发的逐步方法来制备所用的膜,从而在干净的玻璃基板上连续沉积。在稳定的磁场中测量薄膜的电特性,并显示出一些异常的特性,例如高电阻率,取决于所施加磁场的相对较大的霍尔系数以及在室温下的负磁阻效应。这些异常效应已根据胶片的不均匀性质进行了定性分析。

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