首页> 外国专利> CHEMICAL VAPOR DEPOSITION METHOD OF GROWING OXIDE CHEMICAL VAPOR DEPOSITION METHOD OF GROWING OXIDE FILMS WITH GIANT MAGNETORESISTANCE FILMS WITH GIANT MAGNETORESISTANCE

CHEMICAL VAPOR DEPOSITION METHOD OF GROWING OXIDE CHEMICAL VAPOR DEPOSITION METHOD OF GROWING OXIDE FILMS WITH GIANT MAGNETORESISTANCE FILMS WITH GIANT MAGNETORESISTANCE

机译:氧化物生长的化学气相沉积方法巨大的磁致电阻的氧化物生长薄膜的化学气相沉积方法

摘要

A chemical vapor deposition method for forming films or coatings of metal oxide films showing a giant magnetoresistive effect, with the metal oxides having the formula LaxA1-xMnO3 wherein A is selected from the group consisting of barium, calcium, manganese, and strontium, and x is a number in the range of from 0.2 to 0.4. The method uses a liquid source delivery CVD approach, wherein source reagent solution precursor is flash vaporized and is delivered to a CVD chamber (100), wherein it decomposes to deposit the multicomponent metal oxide films with well-controlled stoichiometry.
机译:化学气相沉积法,用于形成具有巨大磁阻效应的金属氧化物膜或膜,化学式为LaxA1-xMnO3的金属氧化物,其中A选自钡,钙,锰和锶,以及x是介于0.2到0.4之间的数字。该方法使用液体源输送CVD方法,其中源试剂溶液前体被闪蒸并输送到CVD腔室(100),在其中它分解成以良好控制的化学计量沉积多组分金属氧化物膜。

著录项

  • 公开/公告号WO9617970A3

    专利类型

  • 公开/公告日1996-08-15

    原文格式PDF

  • 申请/专利权人 ADVANCED TECHNOLOGY MATERIALS INC.;

    申请/专利号WO1995US15201

  • 发明设计人 LI YI-QUN;ZHANG JIMING;

    申请日1995-11-27

  • 分类号C23C;

  • 国家 WO

  • 入库时间 2022-08-22 03:48:51

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