Germanium-on-insulator Materials Have High Hole Mobility

摘要

As device designers look beyond 22 nm, it is becoming clear that we are simply running out of carrier mobility. Strain engineering has helped a lot By applying physical strain to the channel of a MOSFET, you can significantly increase the carrier mobility-enough at even 45 nm to make up for many of the other shortcomings of the device and end up with reasonable current. But many researchers now agree that, at some point, we will have to abandon silicon channels and move to a material with higher carrier mobility.