Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation

摘要

Amorphous indium gallium zinc oxide thin-film transistors have attracted growing interest due to its low energy consumption, possibility of low temperature fabrication and transparency. However, it still has technological problems on reliability and hump due to hydrogen related materials. To solve these problems, we made siloxane passivation layer with less OH bond using spin coating technique and carried out the bias stress testing. TFTs passivated by less OH siloxane show excellent reliability compared with high OH bond condition which showed large hump effect on each tests of positive bias stress and negative bias stress. We achieved the stable device using an organic-inorganic hybrid material by controlling OH bond, and we found that the amount of OH in the passivation layer is a key issue in oxide TFTs reliability.