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首页> 外文期刊>RSC Advances >Modified top-down approach for synthesis of molybdenum oxide quantum dots: sonication induced chemical etching of thin films
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Modified top-down approach for synthesis of molybdenum oxide quantum dots: sonication induced chemical etching of thin films

机译:改进的自上而下方法,用于合成氧化钼量子点:超声诱导薄膜的化学蚀刻

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摘要

A simple and modified top-down approach to synthesize molybdenum oxide (MoO _( x ) : x = 2, 3) quantum dots (QDs) is proposed in this study. This modified approach involves the conversion of a bulk powder material into thin films followed by a sonication induced chemical etching process for synthesising QDs. X-Ray Diffraction (XRD) is used for crystal structural characterization of MoO _( x ) thin films. The crystal structure properties of the MoO _( x ) QDs are analysed by High Resolution Transmission Electron Microscopy (HRTEM) images and corresponding Selected Area Electron Diffraction (SAED) patterns. The optical band gap is estimated by Tauc's plot from UV-Vis-NIR absorption spectra. The excitation dependent photoluminescence (PL) emission of MoO _( x ) QDs as a function of acid concentration is investigated. The growth mechanism of QDs in different crystalline phases as a function of acid concentration is also exemplified in this work. The micro-Raman and Fourier Transform of Infrared (FTIR) spectra are recorded to analyse the vibrational spectrum of the molybdenum–oxygen (Mo–O) bonds in the MoO _( x ) QDs.
机译:在本研究中提出了一种简单和改进的自上而下的方法来合成氧化钼(MOO _(x):x = 2,3)量子点(QDS)。这种改进的方法涉及将散装粉末材料转化为薄膜,然后是用于合成QD的超声诱导的化学蚀刻方法。 X射线衍射(XRD)用于MOO _(X)薄膜的晶体结构表征。通过高分辨率透射电子显微镜(HRTEM)图像和相应的选择区域电子衍射(SAED)图案来分析MOO _(x)QD的晶体结构性质。通过UV-Vis-Nir吸收光谱估计光带隙估计。研究了作为酸浓度的函数的MoO _(X)QD的激发依赖性光致发光(PL)发射。在该工作中也举例说明了作为酸浓度的函数的不同结晶相中QDS的生长机制。记录红外线(FTIR)光谱的微拉曼和傅里叶变换,以分析MOO _(x)QDS中钼 - 氧(MO-O)键的振动谱。

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