Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

摘要

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3?×?{AlxGa1-xN}/AlN, (b) Thin-GaN/3?×?{AlxGa1-xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (1800?cm(2)/V?s) and 2DEG carrier concentration (1.0?×?10(13)?cm(-2)) on Si(111) substrates.