Electro-physical characteristics of MIS structures with HgTe- based single quantum wells for optoelectronics devices

S Dzyadukh; S Nesmelov; A Voitsekhovskii; D Gorn

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Electro-physical characteristics of MIS structures with HgTe- based single quantum wells for optoelectronics devices

机译：基于HGTE的单量子阱的MIS结构的电物理特性，用于光电子装置

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Thepaperpresentsbriefresearchresultsoftheadmittanceofmetal-insulator-semiconductor(MIS)structuresbasedonHg1-xCdxTegrownbymolecular-beamepitaxy(MBE)methodincludingsingleHgCdTe/HgTe/HgCdTequantumwells(QW)inthesurfacelayer.Thethicknessofaquantumwellwas5.6nm,andthecompositionofbarrierlayerswiththethicknessof35nmwascloseto0.65.Measurementswereconductedintherangeoftemperaturesfrom8to200K.ItisshownthatforstructurewithquantumwellbasedonHgTecapacitanceandconductanceoscillationsinthestronginversionareobserved.AlsoitisassumedtheseoscillationsarerelatedwiththerechargingofquantumlevelsinHgTe...

机译：Thepaperpresentsbriefresearchresultsoftheadmittanceofmetal - 绝缘体 - 半导体（MIS）structuresbasedonHg1-xCdxTegrownbymolecular-beamepitaxy（MBE）methodincludingsingleHgCdTe / HgTe组成/ HgCdTequantumwells（QW）inthesurfacelayer.Thethicknessofaquantumwellwas5.6nm，andthecompositionofbarrierlayerswiththethicknessof35nmwascloseto0.65.Measurementswereconductedintherangeoftemperaturesfrom8to200K.ItisshownthatforstructurewithquantumwellbasedonHgTecapacitanceandconductanceoscillationsinthestronginversionareobserved.AlsoitisassumedtheseoscillationsarerelatedwiththerechargingofquantumlevelsinHgTe ...

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《Journal of Physics: Conference Series》 |2016年第1期|共页
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S Dzyadukh; S Nesmelov; A Voitsekhovskii; D Gorn;
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中图分类物理学;
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Electro-physical characteristics of MIS structures with HgTe- based single quantum wells for optoelectronics devices

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