Photosensitive Sulfonated Polyimides utilizing Alkaline-developable Negative-tone Reaction Development Patterning

摘要

Photosensitive polymers have been applied toVarioususes，SuChasphotoresistsfbrpattemlngOfintegratedcircuits（ICs），buf托rcoartlayersforICChips，lnterlayerdielectricmms，andmanufacturlngOf prlntlng Plates，COlor nlters，and optlCalWaVeguides［1，2］．TherequiredresolutionfbrsuchPhotosensitivepolymersotherthanthephotoresistsfbrICsis not very high（10－100pm）．However，these polymers requlre gOOd mechanical andthermalpropertiesbecauseofpermanentremainlngOf the polymersin the manufactures．Thus，POlyimides，Or POly（amic acid）S（PAA）as theirPreCurSOrS，havebeenusuallyusedaspolymersfbrSuChpurposes［3］?Hoァever，functionalgroupsfbrafEbrdingphotosensitivlty muSt beintroducedintothepolymersinviewofdevelopmentstep，andtheintroductionofsuchfunctionalgroupsbringsaboutPrOblems such asincreased difncultyin theSynthesisofphotosensitivepolyimides（PSPIs）anddecreased physICal and mechanical properties ofPSPIs．When PAAs are used as PSPIs，PrOblemslike defbrmation of the pattemS durlng thermalimidization（350°C）oftenoccur．