Novel Fast Etch Rate BARC for ArF Implant Layer Lithography

摘要

As the pattern size for the implantation process decreases, KrF lithography has reached its limit in the implementation of micropatterns, calling for the switch to ArF lithography. The change in wavelength for better resolution has led to the development of patterning materials. As a result, the development of a new bottom anti-refractive coatings (BARC) for implant layer patterning with ArF lithography became necessary. In addition to required chromophores for controlling optical properties with ArF lithography, the new BARC system requires a fast etch rate to reduce etch bias during BARC-opening process with plasma. Designing of fast-etch material could be accomplished with utilization of the widely-used model of Ohnishi parameters (O.P.), while designed material revealed the trade-off between etch rate and solubility in organic solvents. In this paper, the design of the material as well as the problem-solving process to address and resolve the trade-off between the desired properties as BARC and the accompanying problems.