A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers

摘要

Monte Carlo simulations of uniform silicon nMOSFET inversion layers have been performed.Excellent agreement between the simulated and experimental transport characteristicshas been observed in the region of strong inversion at both 300K and 77K. Thecontribution to the effective mobility due to individual subbands has been analyzed and qualitativelyexplained.