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Exciton Binding Energies in ZnSSe/MgSSe Quantum Wells Lattice Matched to GaAs Substrates

机译:与GaAs衬底匹配的ZnSSe / MgSSe量子阱晶格中的激子结合能

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Exciton binding energies in ZnSSe/MgSSe single quantum wells (SQWs) are calculated to study their exciton properties in detail. The heavy-hole exciton binding energies are larger than the light-hole exciton binding energies in narrow wells because the degree of confinement of the heavy-hole excitons is larger than that of the light-hole excitons in these SQWs. The heavy-hole exciton binding and heavy-hole excitonic transition energies calculated for ZnSSe/MgSSe SQWs are comparable to those measured for ZnSe/MgS quantum wells. [DOI: 10.1380/ejssnt.2011.219]
机译:计算了ZnSSe / MgSSe单量子阱(SQWs)中的激子结合能,以详细研究其激子性质。在这些窄量子阱中,重孔激子的结合能比轻孔激子的结合能大,这是因为在这些SQW中,重孔激子的约束度比轻孔激子的约束度大。计算得出的ZnSSe / MgSSe SQWs的重孔激子束缚能和重孔激子跃迁能与ZnSe / MgS量子阱所测得的重能。 [DOI:10.1380 / ejssnt.2011.219]

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