OPTICAL DEVICE INCLUDING MULTI-QUANTUM WELL STRUCTURE LATTICE MATCHED TO GAAS SUBSTRATE, DEPTH IMAGE ACQUISITION APPARATUS AND 3-DIMENSIONAL IMAGE ACQUISITION APPARATUS EMPLOYING THE OPTICAL DEVICE

摘要

Disclosed optical device includes a GaAs substrate; a multi-quantum well structure which is formed on the GaAs substrate and includes a quantum well layer and a quantum barrier layer. The quantum well layer is made of a semiconductor material. The band gap energy of the quantum well layer is lower than that of the GaAs substrate. Pressure stress from the GaAs substrate is applied to the quantum well layer. The quantum barrier layer is made of a of a semiconductor material. The band gap energy of the quantum barrier layer is higher than that of the GaAs substrate. Tensile stress from the GaAs substrate is applied to the quantum barrier layer.