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Structural and Optical Properties of Germanium Thin Films Prepared by the Vacuum Evaporation Technique

机译:真空蒸发技术制备锗薄膜的结构和光学性质

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Germanium (Ge) thin films have been deposited onto the glass substrates by the vacuum evaporation technique. The effect of annealing temperature on the structural and optical properties of the germanium thin films was investigated. The structural and optical properties of thin films were characterized by XRD, SEM, and UV-Vis techniques. XRD results showed that the structure of the deposited thin films changed from amorphous phase for the films, which deposited at room temperature, to crystalline phase for the films, which deposited at high temperature. Optimum temperature to obtain a good crystalline structure was 525°C. The SEM image also showed that the crystallization of the thin films is increased with increasing of annealing temperature. Transmittance and reflectance spectral were used to calculate the absorption coefficient. Two absorption edges in two spectral regions were distinguished according to direct and indirect electron transitions. Energy band gapEgwas calculated by using the Tauc relationship for both direct and indirect electron transitions. The average value ofEgwas equal to 0.79 eV and 0.61 eV for direct and indirect transitions, respectively.
机译:锗(Ge)薄膜已通过真空蒸发技术沉积在玻璃基板上。研究了退火温度对锗薄膜的结构和光学性能的影响。通过XRD,SEM和UV-Vis技术表征了薄膜的结构和光学性质。 XRD结果表明,所沉积的薄膜的结构从室温下沉积的薄膜的非晶相变为高温下沉积的薄膜的晶相。获得良好晶体结构的最佳温度为525℃。 SEM图像还表明,随着退火温度的升高,薄膜的结晶度增加。使用透射率和反射光谱计算吸收系数。根据直接和间接电子跃迁区分两个光谱区域中的两个吸收边缘。通过使用Tauc关系式计算直接和间接电子跃迁的能带隙Eg。对于直接和间接跃迁,Eg的平均值分别等于0.79 eV和0.61 eV。

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