Conductivity of Three-Barrier Resonance Tunnel Structure

摘要

Within the model of rectangular potentials and different effective electron masses it is developed a theory and performed a quantum-mechanical calculation of dynamical conductivity for the electrons interacting with electromagnetic field in open three-barrier resonance tunnel structure with arbitrary outer barriers. For the experimentally investigated structure with In 0.53 Ga 0.47 As-wells and In 0.52 Al 0.48 As-barriers, it is shown that there exist the optimal geometrical configurations determined by the position of the inner barrier respectively the outer ones, providing the optimal operation of nano-device as a separate detector or an active element of such a detector in desired frequency range.