METHOD FOR FORMING SEMICONDUCTOR MICROSTRUCTURE AND SEMICONDUCTOR ELEMENT FORMED USING THAT METHOD, METHOD FOR FABRICATING RESONANCE TUNNEL ELEMENT AND RESONANCE TUNNEL ELEMENT FABRICATED USING THAT METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor microstructure of narrow width with good controllability.;SOLUTION: The method for forming a semiconductor microstructure 104 comprises a step for forming mask patterns 103 and 203 having a first opening 221 and a second opening 222 on a substrate having a semiconductor layer 204 formed thereon, and a step for forming the semiconductor microstructure 104 extending in a first direction parallel with the surface of the substrate by etching the semiconductor layer 204 selectively. In the etching step, etching rate in a second direction perpendicular to the first direction and parallel with the surface of the substrate is substantially zero for etching rate in the first direction, and the width m of the semiconductor microstructure 104 is substantially identical to the shortest distance M between the first opening 221 and the second opening 222 in the second direction.;COPYRIGHT: (C)2003,JPO