Investigating the electro-optical properties of non-stoichiometric silicon nitride thin films for photovoltaic applications

摘要

The electro‐optical properties of devices containing Si‐rich silicon nitride (SRN) thin films, depositedby means of low‐pressure chemical‐vapor deposition (LPCVD), are studied. After optically evidencingthe presence of defects in our films, a Poole‐Frenkel conduction mechanism has been considered,which is in agreement with electrical experiments. We found that the poly‐Si layer stronglymodulates the electroluminescence and light absorption of the devices. In addition, they showedphotocurrent and photoconductivity under illumination, SRN becoming a promising material forphotovoltaic applications.