Quantum Effects Investigation in 20 nm Gate Underlap SOI MOSFET for Millimeter Wave Applications

摘要

This paper presents the investigation of quantum effects of gate underlap 20nm Silicon-On-Insulator (SOI) MOSFETs at 60 GHz. At optimized spacer s = 0.8LG with doping gradient d = 5nm/decade the device DC and AC performances have been investigated with and without quantum effects. After incorporation of quantum effects, at 60 GHz the device current gain, unilateral gain (ULG) and device intrinsic gain are found 50 dB, 70 dB and 36dB respectively at power consumption 0.6 mW. All these parameters have been extracted using 2D ATLAS device simulator. The average 50% performance of device has been increased after incorporating quantum effects model. Although simulated result for current gain nearly 25% higher than measured data (gate length L_G = 20nm) whereas for transit frequency f_T is differ (>13%). However, these comparisons with limited measured data suggest the possibility of use of this device technology in the design of key blocks like low noise amplifier (LNA) and Mixer for mm-w applications.