Detecting Topography of WO3 Semiconductor by Atomic Force Microscope (AFM) and Scanning Tunneling Microscope (STM)

摘要

The morphology of WO3 is studied by AFM microscopy in order to specify the roughness which usually controls the movement of a free electron between the different layers which is fabricated the sensor. Additionally, STM microscopy gives the electrical characteristics of the sample by (STS) in a nanoscopic scale. As well as the electronic cloud which located in the middle distance between atoms and resulted by insertion of their electrons.