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Sacrificial Layer Technique for Releasing Metallized Multilayer SU-8 Devices

机译:用于释放金属化多层SU-8器件的牺牲层技术

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摘要

The low fabrication cost of SU-8-based devices has opened the fields of point-of-care devices (POC), μTAS and Lab-on-Chip technologies, which call for cheap and disposable devices. Often this translates to free-standing, suspended devices and a reusable carrier wafer. This necessitates a sacrificial layer to release the devices from the substrates. Both inorganic (metals and oxides) and organic materials (polymers) have been used as sacrificial materials, but they fall short for fabrication and releasing multilayer SU-8 devices. We propose photoresist AZ 15nXT (MicroChemicals GmbH, Ulm, Germany) to be used as a sacrificial layer. AZ 15nXT is stable during SU-8 processing, making it suitable for fabricating free-standing multilayer devices. We show two methods for cross-linking AZ 15nXT for stable sacrificial layers and three routes for sacrificial release of the multilayer SU-8 devices. We demonstrate the capability of our release processes by fabrication of a three-layer free-standing microfluidic electrospray ionization (ESI) chip and a free-standing multilayer device with electrodes in a microchannel.
机译:基于SU-8的设备的低制造成本已经打开了即时医疗设备(POC),μTAS和芯片实验室技术领域,这些技术要求廉价且一次性的设备。通常,这会转化为自立,悬挂的设备和可重复使用的载体晶圆。这需要牺牲层来从衬底释放器件。无机(金属和氧化物)和有机材料(聚合物)都已用作牺牲材料,但它们不足以制造和释放多层SU-8器件。我们建议将光致抗蚀剂AZ 15nXT(MicroChemicals GmbH,乌尔姆,德国)用作牺牲层。 AZ 15nXT在SU-8处理期间很稳定,使其适合制造独立式多层器件。我们显示了两种方法,用于稳定稳定的牺牲层的AZ 15nXT交联和多层SU-8装置的牺牲释放的三种途径。我们通过制造三层独立式微流电喷雾电离(ESI)芯片和在微通道中带有电极的独立式多层设备来证明我们的释放过程的能力。

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