A new calculation method for thermal and electical characterization in CdTe and CdSe semiconductors

摘要

A new calculation method has been developed and used to model electron transport properties in semiconductor devices under thermal and electrical applications. Using the relaxation-time approximation, the Boltzmann transport equation is solved using the currently established values of the material parameters. This method is used to carry out the thermal energy flux, electrical conductivity, seebeck coefficient and thermal conductivity. Using the driven equations, thermal and electrical properties in CdTe and CdSe materials were been calculated. The calculated results are in fair agreement with other recent calculations obtained by experimental methods.