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Characteristics of Electron Beam Evaporated and Electrodeposited Cu2O thin films – Comparative study

机译:电子束蒸发和电沉积Cu 2 O薄膜的特性-比较研究

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Cuprous oxide thin films (Cu2O) are deposited by electron beam evaporation of Cu2O powder andelectrodeposition. As-deposited films are annealed at 150,250C and the effect of annealing onstructural and optical properties of the films are studied. The films are characterised by X-raydiffraction and UV-Vis. Spectroscopy. X-ray analysis revealed that the as-deposited films areamorphous while the annealed films are polycrystalline in nature. The grains had preferred orientationalong (111) direction. Optical transitions involved are found to be direct and allowed and thecalculated band gap value is in the range of 2.6-2.3 eV. A red shift in the optical band gap of the filmsis observed upon annealing. Though the prominent characteristics exhibited by Cu2O thin filmsdeposited by both the methods are similar there is marked difference in their characteristics in theapplication point of view.
机译:通过电子束蒸发Cu2O粉末和电沉积来沉积氧化亚铜薄膜(Cu2O)。将沉积的薄膜在150,250℃退火,并研究退火对薄膜结构和光学性能的影响。该膜的特征在于X射线衍射和UV-Vis。光谱学。 X射线分析表明,沉积后的薄膜为非晶态,而退火后的薄膜本质上是多晶的。晶粒具有沿(111)方向的优选取向。发现所涉及的光学跃迁是直接的并且是允许的,并且计算的带隙值在2.6-2.3eV的范围内。退火后观察到胶片的光学带隙发生红移。尽管两种方法沉积的Cu2O薄膜表现出的突出特征相似,但从应用的角度来看,它们的特征存在明显差异。

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