Comparative Electrical Study on n‐Type Cd_(1-X)Se_X and CdSe Thin Films Deposited by Electron Beam Evaporation Technique

摘要

Since the last two decades, in the area of electronics, group II‐VI compounds have drawn considerable interest due to their various applications. Cadmium selenide (CdSe), a member of this group, is one of the promising semiconducting material from its application point of view. The n‐type Cd_(1-X)Se_X and CdSe films have been deposited onto ultra cleaned glass substrates by electron bean evaporated technique under 10~(-5)?torr vacuum. The n‐type Cd_(1-X)Se_X thin films has confirmed by Hall effect data. The resistivity of the film has been determined by I‐V measurement using four probe setup. It is observed that the resistivity decreases with increases Cd∕Se ratio and we found that n‐type Cd_(1-X)Se_X thin films is more better than CdSe thin films.