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Structural, Optical and Electrical Properties ofSnxZn1-xO1+xThin Films Using Nebulizer Spray Pyrolysis Technique

机译:喷雾喷雾热解技术制备SnxZn1-xO1 + x薄膜的结构,光学和电学性质

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SnxZn1-xO1+xthin films have been deposited on glass substrates at substrate temperature 400°C through nebulizer spray pyrolysis technique. X-ray diffraction (XRD) analysis shows that the films structure is changed from hexagonal to tetragonal. The high-resolution scanning electron microscopy (HRSEM) studies reveal that the substrate is well covered with a number of grains indicating compact morphology with an average grain size 50–79 nm. Energy dispersive X-ray analysis (EDAX) reveals the average ratio of the atomic percentage. Optical transmittance study shows the presence of direct transition. Band gap energy decreases from 3.33 to 2.87 eV with respect to the rise of Sn content. The electrical resistivity of the thin films was found to be 106 Ω-m.
机译:SnxZn1-xO1 + xthin薄膜已通过雾化器喷雾热解技术在衬底温度为400°C的条件下沉积在玻璃衬底上。 X射线衍射(XRD)分析表明,膜结构从六边形变为四边形。高分辨率扫描电子显微镜(HRSEM)研究表明,基体上覆盖了许多晶粒,表明晶粒形态紧凑,平均晶粒尺寸为50-79 nm。能量色散X射线分析(EDAX)显示了原子百分比的平均比率。透光率研究表明存在直接跃迁。随着Sn含量的增加,带隙能量从3.33降至2.87 eV。薄膜的电阻率为106Ω-m。

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