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A low-power fast-lock DCC with a digital duty-cycle adjuster for LPDDR3 and LPDDR4 DRAMs

机译:具有用于LPDDR3和LPDDR4 DRAM的数字占空比调节器的低功耗快速锁定DCC

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摘要

A new low-power, fast-lock duty-cycle corrector (DCC) circuit with a digital duty-cycle adjuster (DCA) for mobile LPDDR3/LPDDR4 DRAMs is presented. The proposed DCC utilizes a digital feedback delay element (DFDE) to achieve wide duty-cycle correction and operating frequency ranges with low power consumption and fast lock capability. To obtain fast locking time and high duty-cycle correction accuracy, a 6-bit successive approximation register (SAR) controller utilizing a hybrid search algorithm is adopted. The measured duty-cycle error is less than ?±0.85% over a 30a??70% input duty-cycle range at 0.2a??1.5 GHz. The DCC, which is fabricated in a 0.13-?μm CMOS process, dissipates only 1.9 mW at 1 GHz and occupies an area of 0.036 mm2.
机译:提出了一种用于移动LPDDR3 / LPDDR4 DRAM的具有数字占空比调节器(DCA)的新型低功耗,快速锁定占空比校正器(DCC)电路。提出的DCC利用数字反馈延迟元件(DFDE)来实现宽占空比校正和工作频率范围,同时具有低功耗和快速锁定能力。为了获得快速的锁定时间和较高的占空比校正精度,采用了采用混合搜索算法的6位逐次逼近寄存器(SAR)控制器。在0.2a≤1.5 GHz的30a≤70%的输入占空比范围内,测得的占空比误差小于π±0.85%。 DCC采用0.13-μμmCMOS工艺制造,在1 GHz时仅耗散1.9 mW,面积为0.036 mm2。

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