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首页> 外文期刊>Applied Physics Research >Determination of Optical Properties of Undoped Amorphous Selenium (a-Se) Films by Dielectric Modeling of Their Normal-Incidence Transmittance Spectra
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Determination of Optical Properties of Undoped Amorphous Selenium (a-Se) Films by Dielectric Modeling of Their Normal-Incidence Transmittance Spectra

机译:用正入射透射光谱的电介质模型测定未掺杂非晶硒(a-Se)薄膜的光学性质

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Normal-incidence specular transmittance T_exp (?) of undoped amorphous selenium ( a -Se) films of several thicknesses (0.25-1 ?m) thermally evaporated on thick microscopic glass-slide substrates upheld at temperatures near 30 o C (below glass transition temperature of undoped Se) has been measured at room temperature in the spectral wavelength?range 300-1100 nm. Above a threshold wavelength ?_c (~ 600 nm), their as-measured ?T_exp (?)-? curves display transmittance values near that of glass substrates and exhibit well-resolved interference-fringe maxima and minima, signifying good uniformity of fabricated a -Se films. Below?_c, the ?T_exp (?)-? curves decline progressively to zero transmittance, preceded by a tailing-like trend of possible structural disorder origin. The spectral dependencies of optical constants n(?) and?(?) of the studied a -Se films on ? were retrieved from iterative curve-fitting of their T_exp (?)-? data to theoretical T_theor (?)-formulations of an air-supported {thin film/thick substrate}-stack using the O’Leary-Johnson-Lim (OJL) interband-transition dielectric model, combined with a dielectric constant , representing the dielectric background at very high photon energies (at spectral wavelengths much smaller than measured). Regardless of the number of observed interference fringes, reliable simulation to the as-measured normal-incidence T_exp (?)-? spectra has been achieved, but were remarkably curve-fitted if we presume that a thin roughness layer (<5 nm) of selenium was formed on top of the fabricated undoped a -Se films. The retrieved n(?)-? spectra display a broad peak around??0.52 ?m, below which n(?) was found to vary with wavelength in accordance with a Sellmeier-like (Wemple-DiDominco) single-oscillator (normal) dispersion formula, with a static index of refraction n(E=0)=?(?_s )?2.42, where ?_s is the static dielectric constant of the material at zero photon energy , and an oscillator “average” bandgap energy of E_o?3.93 eV?2 E_g^opt, the optical (Tauc) bandgap energy. The values of E_g^opt of studied undoped a -Se films deduced from Tauc-like plots were around 1.92 eV (± 0.02 eV) and the retrieved values of OJL band-tailing energy parameter ? (Urbach-tail parameter ?_U) was found to be in the range 40-50 meV, slightly dependent on film thickness.
机译:在30°C(低于玻璃化转变温度以下)维持的厚微观玻璃载玻片上热蒸发几种厚度(0.25-1μm)的无掺杂非晶硒(a -Se)薄膜的法向入射镜面透射率T_exp(?)在室温下,在300-1100 nm的光谱波长范围内测量了未掺杂Se的质量分数。在阈值波长λ_c(〜600nm)以上,它们的测得的λT_exp(λ)-λ。曲线显示的透射率值接近玻璃基板的透射率值,并显示出良好分辨的干涉条纹最大值和最小值,表明所制备的a-Se膜具有良好的均匀性。在?_c下面,?T_exp(?)-?曲线逐渐下降到零透射率,然后出现可能是结构紊乱的尾巴状趋势。所研究的a-Se薄膜在?上的光学常数n(?)和?(?)的光谱依赖性。从它们的T_exp(?)-?的迭代曲线拟合中检索。使用O'Leary-Johnson-Lim(OJL)带间跃迁介电模型将数据转换为空气支撑{薄膜/厚基板}叠层的理论T_theor(?)公式,并结合介电常数,代表介电常数在非常高的光子能量下(在比测得的光谱波长小得多的光谱波长下)。不管观察到的干涉条纹的数量如何,都可以对所测得的法向入射T_exp(?)-?进行可靠的仿真。光谱已经实现,但是如果我们假设在制造的未掺杂a-Se薄膜的顶部形成了一个薄的硒粗糙度层(<5 nm),则曲线拟合显着。检索到的n(?)-?光谱显示出一个约0.52μm的宽峰,在该峰以下,发现n(α)随波长变化,符合Sellmeier型(Wemple-DiDominco)单振荡器(正常)色散公式,静态指数为折射率n(E = 0)=?(?_ s)?2.42,其中?_s是材料在零光子能量下的静态介电常数,以及振荡器的“平均”带隙能量E_o?3.93 eV?2 E_g ^ opt ,即光(Tauc)带隙能量。由Tauc样图推导的未掺杂a-Se薄膜的E_g ^ opt值约为1.92 eV(±0.02 eV),OJL带尾能参数的取值约为。发现(Urbach-tail参数Δ_U)在40-50meV的范围内,略微取决于膜厚度。

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