High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer

Soo Seok Kang; Suk In Park; Sang Hoon Shin; Cheol-Hwee Shim; Suk-Ho Choi; Jin Dong Song

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High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer

机译：在具有InxAl1-xSb连续渐变缓冲层的GaAs（001）衬底上生长的高质量100 nm厚InSb膜

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The institution with which Jin Dong Song is affiliated has been corrected.

机译：Jin Dong Song所属的机构已被更正。

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《ACS Omega》 |2018年第12期|共1页
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Soo Seok Kang; Suk In Park; Sang Hoon Shin; Cheol-Hwee Shim; Suk-Ho Choi; Jin Dong Song;
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中图分类化学;
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1. High-Quality 100 nm Thick InSb Films Grown on GaAs(001)Substrates with an InxAl1?xSb Continuously Graded Buffer Layer [J] . Soo Seok Kang, Suk In Park, Sang Hoon Shin, ACS Omega . 2018,第11期

机译：在具有InxAl1？xSb连续渐变缓冲层的GaAs（001）衬底上生长的高质量100 nm厚InSb膜
2. High-quality highly mismatched InSb films grown on GaAs substrate via thick AlSb and InxAl1-xSb step-graded buffers [J] . Sato T, Akabori M, Yamada S Physica, E. Low-dimensional systems & nanostructures . 2004,第2a4期

机译：通过厚AlSb和InxAl1-xSb分级梯度缓冲液在GaAs衬底上生长的高质量高度不匹配的InSb膜
3. Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In_xAl_(1-x)Sb continuously graded buffer [J] . Sang Hoon Shin, Jin Dong Song, Ju Young Lim, Materials Research Bulletin . 2012,第10期

机译：在具有In_xAl_（1-x）Sb连续梯度缓冲液的GaAs（1 0 0）衬底上生长的高质量0.41μm厚InSb膜的结构和电学性质
4. Structural Defects in InSb Quantum Wells Grown on GaAs (001) Substrates via Al_(0.09)In_(0.91)Sb/GaSb-AlSb Strained Layer Superlattice/AlSb/GaSb Buffer Layers [C] . Symposium on Progress in Semiconductor Materials - Novel Materials and Electronic and Optoelectronic Applications . 2006

机译：通过AL_（0.09）在GaAs（001）底物上生长的INSB量子孔中的结构缺陷（0.09）IN_（0.91）SB / GASB-ALSB应变层超晶格/ ALSB / GASB缓冲层
5. Microstructure of gallium nitride thick films grown by CVD on conventional and LEO substrates. [D] . Dunn, Kathleen Ann. 2001

机译：在常规和LEO基板上通过CVD生长的氮化镓厚膜的微观结构。
6. High-Quality 100 nm Thick InSb Films Grown on GaAs(001)Substrates with an InxAl1–xSb Continuously Graded Buffer Layer [O] . Soo Seok Kang, Suk In Park, Sang Hoon Shin, 2018

机译：GaAs（001）上生长的高质量100 nm厚InSb膜具有InxAl1-xSb连续渐变缓冲层的基板
7. High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer [O] . Soo Seok Kang, Suk In Park, Sang Hoon Shin, 2018

机译：高质量100nm厚的INCB薄膜在GaAs（001）底板上，具有inxal1-xsb连续分级缓冲层

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer

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