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Fabrication and Characterization of Multilayer Capacitors Buried in a Low Temperature Co-Fired Ceramic Substrate

机译:埋在低温共烧陶瓷基板中的多层电容器的制备与表征

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Multilayer ceramic capacitors designed to be embedded in a lowtemperature co-fired ceramic substrate have been successfullyfabricated. Low and high value capacitors were respectivelyembedded in the lowKmultilayer substrate and highKdielectriclayer. The buried capacitor has a capacitance density range (1kHz) from about 220 pF/cm2to 30 nF/cm2. The design tookmaterial compatibility and shrinkage characteristics specificallyinto account. The effects of heating rate and peak temperatureholding time on the densification of the laminate were studied.The scanning electron micrograph revealed no evident cracking inthe fired components. The electrical properties of the buriedcapacitors such as dissipation factor, insulation resistance andbreakdown voltage were studied and found to be good for deviceapplication. The temperature dependence of the dissipation factorand coefficient of capacitance for the buried capacitor was alsostudied.
机译:设计成功嵌入低温共烧陶瓷基板中的多层陶瓷电容器。低值和高值电容器分别嵌入在低K多层基板和高K介电层中。埋入式电容器的电容密度范围(1kHz)为约220 pF / cm2至30 nF / cm2。该设计特别考虑了材料的兼容性和收缩特性。研究了加热速率和峰值保温时间对层压板致密化的影响。扫描电子显微镜照片显示,烧成后的部件没有明显的裂纹。研究了埋入式电容器的电学性质,如耗散因数,绝缘电阻和击穿电压,发现它们对器件的应用是有利的。还研究了埋入式电容器的耗散因数与电容系数的温度依赖性。

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