首页> 美国卫生研究院文献>Micromachines >Fabrication and Packaging of CMUT Using Low Temperature Co-Fired Ceramic
【2h】

Fabrication and Packaging of CMUT Using Low Temperature Co-Fired Ceramic

机译:使用低温共烧陶瓷制造和包装CMUT

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

This paper presents fabrication and packaging of a capacitive micromachined ultrasonic transducer (CMUT) using anodically bondable low temperature co-fired ceramic (LTCC). Anodic bonding of LTCC with Au vias-silicon on insulator (SOI) has been used to fabricate CMUTs with different membrane radii, 24 µm, 25 µm, 36 µm, 40 µm and 60 µm. Bottom electrodes were directly patterned on remained vias after wet etching of LTCC vias. CMUT cavities and Au bumps were micromachined on the Si part of the SOI wafer. This high conductive Si was also used as top electrode. Electrical connections between the top and bottom of the CMUT were achieved by Au-Au bonding of wet etched LTCC vias and bumps during anodic bonding. Three key parameters, infrared images, complex admittance plots, and static membrane displacement, were used to evaluate bonding success. CMUTs with a membrane thickness of 2.6 µm were fabricated for experimental analyses. A novel CMUT-IC packaging process has been described following the fabrication process. This process enables indirect packaging of the CMUT and integrated circuit (IC) using a lateral side via of LTCC. Lateral side vias were obtained by micromachining of fabricated CMUTs and used to drive CMUTs elements. Connection electrodes are patterned on LTCC side via and a catheter was assembled at the backside of the CMUT. The IC was mounted on the bonding pad on the catheter by a flip-chip bonding process. Bonding performance was evaluated by measurement of bond resistance between pads on the IC and catheter. This study demonstrates that the LTCC and LTCC side vias scheme can be a potential approach for high density CMUT array fabrication and indirect integration of CMUT-IC for miniature size packaging, which eliminates problems related with direct integration.
机译:本文介绍了使用可阳极氧化的低温共烧陶瓷(LTCC)的电容式微机械超声换能器(CMUT)的制造和封装。 LTCC与绝缘体上的金过孔硅(SOI)的阳极键合已用于制造膜半径分别为24 µm,25 µm,36 µm,40 µm和60 µm的CMUT。在湿蚀刻LTCC通孔之后,在剩余的通孔上直接图案化底部电极。在SOI晶圆的Si部分上对CMUT腔和Au凸点进行了微加工。该高导电性Si也用作顶部电极。 CMUT顶部和底部之间的电连接是通过在阳极键合期间对湿法蚀刻的LTCC通孔和凸点进行Au-Au键合来实现的。红外成像,复导纳图和静态膜位移这三个关键参数用于评估粘合成功与否。制作了膜厚度为2.6 µm的CMUT,用于实验分析。在制造过程之后,已经描述了一种新颖的CMUT-IC封装过程。此过程使得能够使用LTCC的横向过孔间接封装CMUT和集成电路(IC)。侧面通孔是通过对制造的CMUT进行微加工而获得的,并用于驱动CMUT元件。连接电极在LTCC侧的通孔上被图案化,并在CMUT的背面组装了导管。通过倒装芯片接合工艺将IC安装在导管的接合垫上。通过测量IC和导管上垫之间的结合电阻来评估结合性能。这项研究表明,LTCC和LTCC侧通孔方案可以成为高密度CMUT阵列制造和CMUT-IC间接集成用于微型尺寸封装的潜在方法,从而消除了与直接集成相关的问题。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号