首页> 外文期刊>Chalcogenide Letters >MORPHOLOGICAL AND ELECTRICAL STUDIES OF Zn DOPED CdTe THIN FILM BY STACKED ELEMENTAL LAYER METHOD
【24h】

MORPHOLOGICAL AND ELECTRICAL STUDIES OF Zn DOPED CdTe THIN FILM BY STACKED ELEMENTAL LAYER METHOD

机译:叠层元素层法研究掺锌CdTe薄膜的形貌和电学

获取原文
           

摘要

Zn doped CdTe thin films have been prepared by using Stacked Elemental Layer (SEL) method. The electrical studies of the annealed thin films have been carried out for different temperature using Van der Pauw technique. The conductivity of Zn doped film lies in between 6.9 ×10-4to 1.56 × 102Scm-2. The effects of annealing temperature on morphology were performed by using Scanning Electron Microscope (SEM) and analyzed by using imageJ software. Annealed films are having nano size particles of about 26 nm. An EDAX spectrum reveals the prepared thin films having the desired composition
机译:Zn掺杂的CdTe薄膜已通过使用堆叠元素层(SEL)方法制备。使用Van der Pauw技术在不同温度下对退火的薄膜进行了电学研究。锌掺杂薄膜的电导率在6.9×10-4至1.56×102Scm-2之间。使用扫描电子显微镜(SEM)进行退火温度对形貌的影响,并使用imageJ软件进行分析。退火膜具有约26nm的纳米尺寸的颗粒。 EDAX光谱揭示了所制备的具有所需组成的薄膜

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号