Optical Properties and Surface Morphology of Zinc Telluride Thin Films Prepared by Stacked Elemental Layer Method

摘要

ZnTe thin films were prepared by Stacking of elemental (Zn and Te) layers (SEL) followed by inert gas annealing. The optical parameters were calculated from the transmission spectra. The bandgap of the annealed samples was found between 1.95?eV?and 2.06?eV. The change in film thickness after annealing was observed using cross sectional SEM image of the annealed samples. The surface morphology of the annealed Te/Zn stack was also analyzed and observed as very smooth, compact and dense surface. The prepared film was Zn rich evidenced by EDAX. The observed result encourages in pursuing the SEL method for the preparation of compound semiconductor from II-VI group materials.