Characterization, morphology and electrical properties of chemically deposited nanocrystalline PbS/Si heterojunction thin films

摘要

A nanocrystalline thin films of PbS with different thickness (400, 600)nm have been prepared successfully by chemical bath deposition technique on glass and Si substrates. The structure and morphology of these films were studied by X -ray diffraction and atomic force microscope. It shows that the structure is polycrystalline and the average crystallite size has been measured. The electrical properties of these films have been studied, it was observed that D.C conductivity at room temperature increases with the increase o f thickness, From Hall measurements the conductivity for all samples of PbS films is p -type. Carrier's concentratio n, mobility and drift velocity increases with increasing of thickness. Also p-PbS-Si heterojunction has been fabricated at different thickness. The reverse bias capacitance was measured as a function of bias voltage, and it is indicated that these HJs are abrupt. The capacitance decreases with increasing the reverse bias, and fixed at high value of reverse bias voltage. The capacitance increases with increasing thickness. The width of depletion layers decreases with increases thickness. The value of highest built in potential has been measured. The current-voltage characteristic sho w that the forward current at dark condition varies exponentially with applied voltage and the junction was coinciding with recombination-tunneling model. The difference between forward and reverse current with applied voltage indicates that the junction has a high rectification characteristic. The value of id eality factor was varies between (1.821-1.715), From the I-V measurements under illumination, the photocurrent increased with increasing thickness.