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Soft Errors in Advanced Computer Systems

机译:先进计算机系统中的软错误

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AS THE DIMENSIONS and operating voltages of computer electronics shrink to satisfy consumers' insatiable demand for higher density, greater functionality, and lower power consumption, sensitivity to radiation increases dramatically. In terrestrial applications, the predominant radiation issue is the soft error, whereby a single radiation event causes a data bit stored in a device to be corrupted until new data is written to that device. In the past two decades, researchers have discovered three key radiation mechanisms that cause soft errors in semiconductor devices at terrestrial altitudes. In the late 1970s, alpha particles emitted by trace uranium and thorium impurities in packaging materials proved to be the dominant cause of soft errors in DRAM devices. During the same era, researchers showed that high-energy (more than 1 million electron volts, or MeV) neutrons from cosmic radiation could induce soft errors in semiconductor devices via the secondary ions produced by the neutron reactions with silicon nuclei. In the mid-1990s, high-energy cosmic radiation proved to be the dominant source of soft errors in DRAM devices. Finally, researchers identified a third soft-error mechanism, induced by low-energy cosmic neutron interactions with the isotope boron-10 (~(10)B) in IC materials, specifically in borophosphosilicate glass (BPSG), used widely to form insulator layers in IC manufacturing. This recently proved to be the dominant source of soft errors in 0.25-and 0.18-(mu)m SRAM fabricated with BPSG.
机译:随着计算机电子器件尺寸和工作电压的减小,以满足消费者对更高密度,更高功能性和更低功耗的不满足需求,对辐射的敏感性急剧增加。在地面应用中,主要的辐射问题是软错误,由此单个辐射事件会导致存储在设备中的数据位被破坏,直到将新数据写入该设备。在过去的二十年中,研究人员发现了三种主要的辐射机制,这些机制导致了地面高度半导体器件的软错误。在1970年代后期,包装材料中微量铀和or杂质释放出的α粒子被证明是DRAM器件软错误的主要原因。在同一时期,研究人员表明,来自宇宙辐射的高能(超过一百万个电子伏特或MeV)中子可通过中子与硅核反应产生的二次离子,在半导体器件中引起软错误。在1990年代中期,高能宇宙辐射被证明是DRAM设备中软错误的主要来源。最后,研究人员确定了第三种软错误机制,该机制是由低能宇宙中子与IC材料(特别是硼磷硅玻璃(BPSG))中的同位素硼10(〜(10)B)相互作用引起的,该现象广泛用于形成绝缘体层在集成电路制造中。最近证明这是使用BPSG制造的0.25和0.18μmSRAM中软错误的主要来源。

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