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机译:MOCVD法生长Al 0.88 sub> In 0.12 sub> N / AlN / GaN / AlN异质结构中二维电子气的阱参数
Dept. of Physics Faculty of Science and Arts University of Gazi Teknikokullar 06500 Ankara Turkey;
Nanotechnology Research Center Bilkent University Bilkent 06800 Ankara Turkey;
Dept. of Physics Faculty of Science and Arts Ahi Evran University Aşıkpaşa Kampüsü 40040 Kırşehir Turkey;
Dept. of Engineering Physics Faculty of Engineering Ankara University 06100 Besevler Ankara Turkey;
Dept. of Physics Bilkent University Bilkent 06800 Ankara Turkey and Dept. of Electrical and Electronics Engineering Bilkent University Bilkent 06800 Ankara Turkey;
机译:MOCVD生长的Al0.88In0.12N / AlN / GaN / AlN异质结构中二维电子气的阱参数
机译:二维电子气的AlN / GaN / AlGaN和AlN / GaN / InAlN异质结构的参数对其电性能和晶体管特性的影响
机译:外延AlN /蓝宝石模板上生长的高迁移率AlGaN / AlN / GaN异质结构的纳米结构表征和二维电子气性质
机译:MOVPE生长的Al_xGa(1-x)N / AlN / GaN异质结构的高迁移率二维电子气的磁输运性质
机译:晶格匹配InxAl 1-xN与GaN的Vegard定律的验证以及用于深紫外LED的AlxGa1-xN / AlN的MOCVD生长
机译:以AlN / GaN超晶格为阻挡层的MOCVD法生长GaN HEMT中的2-DEG特性
机译:MOCVD生长的Al0.88In 0.12N / AlN / GaN / AlN异质结构中二维电子气的阱参数
机译:无掺杂GaN / alN / alGaN径向纳米线异质结构作为高电子迁移率晶体管。